Method for manufacturing CMOS image sensor having microlens...

Details Method for manufacturing CMOS image sensor having microlens... Method for manufacturing CMOS image sensor having microlens...

2005-12-27

2005-12-27

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C438S075000, C438S144000

Reexamination Certificate

active

06979588

ABSTRACT:
The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

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