Method for manufacturing CMOS image sensor

Details Method for manufacturing CMOS image sensor Method for manufacturing CMOS image sensor

2006-12-26

2010-02-09

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C438S200000, C438S231000, C438S237000, C257SE21634, C257SE21636

Reexamination Certificate

active

07659133

ABSTRACT:
Disclosed is a method for manufacturing a CMOS image sensor, capable of preventing dopants implanted with high energy from penetrating into a lower part of a gate electrode when a photodiode is formed, thereby preventing current leakage of a transistor and variation of a threshold voltage. The method includes the steps of forming a gate electrode on a transistor area of a first conductive type semiconductor substrate including a photodiode area and the transistor area, forming a salicide layer on the gate electrode, and implanting second conductive type dopants for forming a photodiode in a photodiode area of the semiconductor substrate.

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patent: 2007/0072325 (2007-03-01), Rhodes
Chinese Office Action; Application No. 200610156706.2; Dated: Apr. 18, 2008; The State Intellectual Property Office of the People's Republic of China.
Chinese Office Action with English Translation; Application No. 200610156706.2; Dated: Apr. 3,2009; The State Intellectual Property Office of P.R.C., People's Republic of China.

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