Method for manufacturing CMOS image sensor

Details Method for manufacturing CMOS image sensor Method for manufacturing CMOS image sensor

2007-01-16

2007-01-16

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S048000, C438S069000, C438S070000

Reexamination Certificate

active

10983990

ABSTRACT:
The present invention discloses a method for manufacturing an image sensor which makes the boundaries between microlenses clear by forming a guide layer in advance and can increase the focal distance of light and the quantity of light by forming the spheres of the microlenses to have a constant height.

REFERENCES:
patent: 5595930 (1997-01-01), Baek
patent: 6369417 (2002-04-01), Lee
patent: 6429036 (2002-08-01), Nixon et al.
patent: 6617189 (2003-09-01), Chen et al.
patent: 6737719 (2004-05-01), Yamamoto

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