Method for manufacturing CMOS image sensor

Details Method for manufacturing CMOS image sensor Method for manufacturing CMOS image sensor

2006-10-17

2006-10-17

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C438S075000, C438S098000, C438S057000

Reexamination Certificate

active

07122397

ABSTRACT:
A method for manufacturing a CMOS image sensor includes depositing a gate oxide film and polysilicon on a substrate, forming a gate electrode by patterning and etching the gate oxide layer and the polysilicon, wherein the polysilicon of the gate electrode extends to an active region of the substrate, forming spacers on the sidewalls of the gate electrode, forming a mask pattern having an opening over the active region, removing the spacers and the gate oxide layer thereunder in the active region, removing the mask pattern, depositing a protective layer on a pixel region of the substrate, and conducting a salicide formation process on the resulting structure.

REFERENCES:
patent: 6040592 (2000-03-01), McDaniel et al.
patent: 6083847 (2000-07-01), Kuo
patent: 6160282 (2000-12-01), Merrill
patent: 6344668 (2002-02-01), Hatano et al.
patent: 6495434 (2002-12-01), Rhodes
patent: 6642076 (2003-11-01), Yaung et al.

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