Method for manufacturing CIS based thin film solar cell device

Details Method for manufacturing CIS based thin film solar cell device Method for manufacturing CIS based thin film solar cell device

2011-07-12

2011-07-12

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S084000, C438S094000, C257SE21090

Reexamination Certificate

active

07977139

ABSTRACT:
Before a buffer layer deposition step P5, a pre-rinse step P4is provided to remove deposits deposited on the surface of a CIS-based light absorbing layer3D. Thus, the disturbing factors of the formation reaction of the buffer layer are removed, thereby to improve the coverage of the buffer layer, and to hold the transparency thereof. In addition, a rinse step P6is provided after the step P5. Thus, the colloidal solid matter remaining on the buffer layer surface is cleaned and removed with a rinse solution, thereby to hold the high resistivity. The rinse solution from a second rinse tank of the step P6is re-used. After the step P6, a draining/drying step P7is provided. After drying, an n-type window layer (transparent conductive film) is deposited.

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