Method for manufacturing CIS-based thin film solar cell

Details Method for manufacturing CIS-based thin film solar cell Method for manufacturing CIS-based thin film solar cell

2011-08-02

2011-08-02

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S098000, C438S102000, C257SE21068

Reexamination Certificate

active

07989256

ABSTRACT:
In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.

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Holz, J. et al. “The Effect of Substrate Impurities on Electronic Conductivity in CIS Thin Films”,Twelfth European Photovoltaic Solar Energy ConferenceApr. 11-15, 1004. Amsterdam, The Netherlands, p. 1592-1595.

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