Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1996-08-13
1998-04-21
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438587, H01L 21339
Patent
active
057417288
ABSTRACT:
A method for manufacturing a charge-coupled device in which the resistances of the respective poly-gates are made to be the same to thereby enhance the charge transfer efficiency, is disclosed including the steps of forming a first semiconductor layer on a substrate; implanting an impurity ion having a first concentration on the first semiconductor layer; patterning the first semiconductor layer to form a plurality of first gate electrode lines having a first width and spaced apart by a constant distance; forming a second semiconductor layer on the first gate electrode line and the exposed entire surface of the substrate; implanting an impurity ion having a second concentration on the second semiconductor layer; and patterning the second semiconductor layer to form second gate electrode lines having a second width between the first gate electrode lines.
REFERENCES:
patent: 4766089 (1988-08-01), Davids et al.
patent: 5485207 (1996-01-01), Nam
patent: 5510285 (1996-04-01), Kim
patent: 5578511 (1996-11-01), Son
Chaudhari Chandra
LG Semicon Co. Ltd.
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