Method for manufacturing CCD image pickup device

Fishing – trapping – and vermin destroying

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437 3, 437 50, H01L 21339

Patent

active

056795971

ABSTRACT:
A method for manufacturing a CCD (charge coupled device) image pickup device includes (1) forming a P well and a field oxide layer upon an N type substrate, forming a buried CCD channel, and a photo diode; (2) forming a gate insulating layer and gate electrodes for a VCCD and an HCCD, and covering the electrodes with a cap gate insulating layer; (3) forming an etch stop layer on the cap gate insulating layer, removing a portion of the etch stop layer to form a contact hole, depositing a first insulating layer, and etching the layer and the cap layer to expose the gate electrode; (4) depositing and patterning to form a metal wiring connected to the gate electrode; (5) forming an inter-layer insulating layer on the metal wiring and the first insulating layer; (6) forming a photoresist mask for covering a peripheral circuit portion and an HCCD portion and wet-etching the inter-layer insulating layer and the first insulating layer by using the photoresist mask to open a light receiving portion; and (7) depositing a light shielding metal layer, removing the layer above a photo diode of a light receiving portion, wherein at the step (5), an etch speed for the inter-layer insulating layer is made to be faster than that for the first insulating layer, resulting a surface etch speed to be faster than an etch speed at a boundary of the first insulating layer, causing a boundary of the inter-layer insulating layer to have a positive slope after the wet-etching.

REFERENCES:
patent: 4859624 (1989-08-01), Goto
patent: 5202282 (1993-04-01), Son
patent: 5246875 (1993-09-01), Shinji et al.
patent: 5422285 (1995-06-01), Ishibe
patent: 5567632 (1996-10-01), Nakashiba et al.

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