Method for manufacturing capacitor of semiconductor element

Details Method for manufacturing capacitor of semiconductor element Method for manufacturing capacitor of semiconductor element

2007-11-27

2007-11-27

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C257SE21350

Reexamination Certificate

active

11089122

ABSTRACT:
A method for manufacturing a capacitor of a semiconductor element including: forming a bottom electrode of the capacitor on a semiconductor substrate; performing rapid thermal nitrification (RTN) on the upper surface of the bottom electrode; performing a thermal process on the obtained structure having the bottom electrode in a furnace under a nitride atmosphere to eliminate stress generated by the RTN; forming Al2O3and HfO2dielectric films on the nitrified bottom electrode; and forming a plate electrode of the capacitor on the Al2O3and HfO2dielectric films. The thermal process is performed after the RTN performed on the surface of the bottom electrode, so that stress, generated from the RTN, is alleviated, thereby allowing the capacitor to obtain a high capacitance and lowering leakage current.

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patent: 6569728 (2003-05-01), Lee et al.
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patent: 6740553 (2004-05-01), Lee et al.
patent: 6808979 (2004-10-01), Lin et al.
patent: 2002-0096129 (2002-12-01), None

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