Method for manufacturing capacitor element

Details Method for manufacturing capacitor element Method for manufacturing capacitor element

1998-07-24

2000-08-08

Elms, Richard

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438396, 438584, 438381, H01L 2100, H01L 2120

Patent

active

061001007

ABSTRACT:
The method of this invention provides a method for manufacturing a capacitor element composed of films. The films have a precise etched shape without a residue that may be generated as a reaction product in a dry-etching process. In this invention, washing in a non-oxidizing atmosphere, inclining a side of a mask for etching or heating a substrate prevents the reaction product from remaining on the film as a residue. The reaction product can be washed away with water, acid or organic solvent in inert gas. The reaction product can be removed from the side of the mask by sputter-etching with ions for dry-etching. The reaction product can be exhausted without adhering to the mask by heating the substrate at a temperature between 100.degree. C. and 400.degree. C.

REFERENCES:
patent: 5135608 (1992-08-01), Okutani
patent: 5423285 (1995-06-01), Paz de Araujo et al.
patent: 5434102 (1995-07-01), Watanabe et al.
patent: 5468684 (1995-11-01), Yoshimori et al.
patent: 5624864 (1997-04-01), Arita et al.
patent: 5689126 (1997-11-01), Takaishi
patent: 5716875 (1998-02-01), Jones, Jr. et al.
patent: 5837591 (1998-11-01), Shimada et al.
patent: 5879981 (1999-03-01), Tanigawa
patent: 5972096 (1999-10-01), Sawada et al.
Wolfe et al. Silicon Processing for the VLSI Era, vol. 1, pp. 57-58, Lattice Press, (1986, Month Unknown).

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