Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2007-09-25
2007-09-25
Trinh, Minh (Department: 3729)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C029S025410, C029S025420, C361S303000, C361S306300
Reexamination Certificate
active
11317986
ABSTRACT:
A capacitor and a method for manufacturing the same provide a branched capacitor with a large capacitance and a super-slim structure. The method includes sintering a ceramic substrate; forming a plurality of troughs in the sintered ceramic substrate, the plurality of troughs including first and second sets of troughs corresponding to opposing electrodes; and filling the troughs with metal to form a plurality of metal lines arranged alternately in the plurality of troughs.
REFERENCES:
patent: 3872360 (1975-03-01), Sheard
patent: 4604676 (1986-08-01), Senda et al.
patent: 4819128 (1989-04-01), Florian et al.
patent: 4910638 (1990-03-01), Berghout et al.
patent: 5735027 (1998-04-01), Hageman et al.
patent: 5757610 (1998-05-01), Wada et al.
patent: 6687114 (2004-02-01), Kamath et al.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Trinh Minh
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