Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2006-05-18
2010-06-01
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C257SE21088
Reexamination Certificate
active
07727860
ABSTRACT:
The present invention provides a method for manufacturing a bonded wafer, which includes at least the steps of bonding a bond wafer and a base wafer, grinding an outer peripheral portion of the bonded bond wafer, etching off an unbonded portion of the ground bond wafer, and then reducing a thickness of the bond wafer, wherein, in the step of grinding the outer peripheral portion, the bonded bond wafer is ground so as to form a groove along the outer peripheral portion of the bond wafer to form an outer edge portion outside the groove; and in the subsequent step of etching, the outer edge portion is removed together with the groove portion of the bond wafer to form a terrace portion where the base wafer is exposed at the outer peripheral portion of the bonded wafer. Thus, it is possible to provide a method for manufacturing a bonded wafer, which can reduce the number of dimples formed in a terrace portion of a base wafer upon removing an outer peripheral portion of a bonded bond wafer.
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Miyazaki Susumu
Okabe Keiichi
Takei Tokio
Booth Richard A.
Oliff & Berridg,e PLC
Shin-Etsu Handotai & Co., Ltd.
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