Method for manufacturing bonded wafer and bonded wafer manufactu

Details Method for manufacturing bonded wafer and bonded wafer manufactu Method for manufacturing bonded wafer and bonded wafer manufactu

1997-02-28

1999-12-21

Dutton, Brian

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438692, H01L 2130, H01L 2146, H01L 21302, H01L 21461

Patent

active

060048662

ABSTRACT:
A method for manufacturing a bonded wafer comprises the steps of; mirror-polishing a surface of first and second substrates, bringing the mirror-polished surfaces of the substrates contact with each other to join them, and subjecting the substrates to a heat treatment to firmly bond them. One of the surfaces of the first and second substrates prior to bonding, or one surface of the bonded wafer is subjected to a polishing treatment for exerting little influence by irregularities on a rear surface of the one substrate or by a figure of a surface of a polishing plate which is in contact with the rear surface of the one substrate.

REFERENCES:
T. Abe et al., "Wafer Bonding Technique for Silicon-on-Insulator Technology", Solid State Technology, vol. 33, No. 11, Nov. 1, 1990, pp. 39-40.
J. Haisma et al., "Improved Geometry of Double-Sided Polished Parallel Wafers Prepared for Direct Wafer Bonding", Applied Optics, vol. 33, No. 34, Dec. 1, 1994, pp. 7945-7954.
J. Haisma et al., "Silicon-wafer Fabrication and (Potential) Applications of Direct-Bonded Silicon", Philips Journal of Research, vol. 49, No. 1-2, 1995, pp. 65-89.
W.P. Maszara, "Silicon-On-Insulator By By Wafer Bonding: A Review", Journal of the Electrochemical Society, vol. 38, No. 1, Jan. 1, 1991, pp. 341-347.

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