Method for manufacturing bonded substrate and bonded...

Details Method for manufacturing bonded substrate and bonded... Method for manufacturing bonded substrate and bonded...

2006-11-21

2008-10-28

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S459000, C257SE21212, C257SE21088, C257SE21143, C257SE21568, C257SE21601

Reexamination Certificate

active

07442623

ABSTRACT:
A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlapping a first semiconductor substrate serving as an active layer onto a second semiconductor substrate serving as a support substrate via an oxide film or without an oxide film; the active layer is formed by forming a thin film from the first semiconductor substrate; and the surface of the active layer is flattened by vapor-phase etching. After forming a thin film from the first semiconductor substrate and before flattening the surface of the active layer by the vapor-phase etching, an organic substance adhering to the surface of the active layer is removed and a native oxide film generated on the surface of the active layer is removed after removing the organic substance.

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