Method for manufacturing bonded semiconductor body

Details Method for manufacturing bonded semiconductor body Method for manufacturing bonded semiconductor body

1991-07-29

1993-03-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437946, 437247, 148DIG12, 148DIG17, 148DIG135, H01L 21302

Patent

active

051963752

ABSTRACT:
A method for manufacturing a bonded semiconductor body including contacting the flat mirror surfaces of semiconductor substrate wafers used as semiconductor element substrates, and subjecting the adhered semiconductor substrate wafers to a heat treatment at a temperature higher than 200.degree. C. and lower than the melting point of the semiconductor substrate wafers to bond the mirror surfaces. The surface roughness of each of the mirror surfaces of the semiconductor substrate wafers is set not more than 130 .ANG. at its maximum value when measured in a range of 1 mm on a reference plane provided in a predetermined area of the mirror surface.

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Ishikawa, M., "Papers in the Scientific Lectures in Aluminum Meeting of `Seiki Gakkai,` Showa-56," 1981, pp. 440, 450, and 451.
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