Method for manufacturing bipolar transistors having extremely re

Details Method for manufacturing bipolar transistors having extremely re Method for manufacturing bipolar transistors having extremely re

1991-04-01

1991-12-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 33, 148DIG10, 357 34, H01L 21266, H01L 2706, H01L 2710, H01L 21263

Patent

active

050700286

ABSTRACT:
A method for manufacturing a heterobipolar transistor having and at least greatly diminished extrinsic base-collector capacitance provides an insulation implantation in a sub-collector layer grown onto a semi-insulating substrate via a first mask that covers a region provided for the sub-collector to be constructed or the sub-collector is formed by doping the semi-insulating substrate through a mask. The semiconductor layers for the collector, the base and the emitter, the sub-collector being fashioned in a limited region provided therefore and the emitter is aligned on the sub-collector with a second mask.

REFERENCES:
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patent: 4839303 (1989-06-01), Tully et al.
Asbeck et al, "GaAs/(Ga,Al)As . . . Isolation Layers," IEEE Electron Device Letters, vol. EDL-5, No. 8, 1984, pp. 310-312.

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