Method for manufacturing bipolar transistor

Details Method for manufacturing bipolar transistor Method for manufacturing bipolar transistor

2007-12-10

2008-10-28

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S322000, C438S327000, C257SE21608

Reexamination Certificate

active

07442617

ABSTRACT:
A method for manufacturing a bipolar transistor comprising: forming a device isolation layer in a device isolation region of a semiconductor substrate having therein first and second well regions having a first conductivity; implanting ions of a second conductivity in the first well to form a third well; forming and patterning a conductive layer on the third well region to form a base electrode pattern; forming a spacer on a sidewalls of the base electrode pattern; implanting first conductivity type ions in the semiconductor substrate to form an emitter region adjacent to the base electrode pattern and form a collector region in the second well region; and performing a diffusion process to form a base region adjacent to the emitter region.

REFERENCES:
patent: 5665615 (1997-09-01), Anmo
patent: 6177325 (2001-01-01), Jang
patent: 7088168 (2006-08-01), Lee et al.

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