Method for manufacturing back side illumination image sensor

Details Method for manufacturing back side illumination image sensor Method for manufacturing back side illumination image sensor

2011-07-26

2011-07-26

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S059000, C438S070000, C438S455000, C438S458000, C257SE21001

Reexamination Certificate

active

07985613

ABSTRACT:
A method of manufacturing a back side illumination image sensor is provided. The method can include forming an ion implantation layer in a front side of a first substrate, forming a photodetector and a readout circuit on the first substrate, forming an interlayer dielectric layer and a metal line on the front side of the first substrate, bonding a second substrate with the front side of the first substrate, removing a lower portion of the first substrate on the basis of the ion implantation layer, performing an annealing process with respect on a back side of the first substrate, and forming a microlens over the photodetector.

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patent: 2005/0104148 (2005-05-01), Yamamoto et al.
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patent: 2009/0057803 (2009-03-01), Kanbe
patent: 2009/0189234 (2009-07-01), Mabuchi
patent: 2009/0197365 (2009-08-01), Kim et al.
patent: 2010/0159632 (2010-06-01), Rhodes et al.

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