Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Reexamination Certificate
1999-11-04
2001-06-19
Pianalto, Bernard (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
C427S058000, C427S096400, C427S123000, C427S126400, C427S250000, C427S296000, C427S531000, C427S536000, C427S537000, C427S569000, C427S576000
Reexamination Certificate
active
06248409
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates, in general, to a method for manufacturing antistatic integrated circuit (IC) trays and, more particularly, to the use of ion implantation in providing antistaticity for IC trays, which enables gaseous ions, such as nitrogen or argon, etc., as well as metal ions, such as Ti, Li, or Al, etc., to be implanted to endow the IC trays of polymer materials with a surface conductivity of 10
6
to 10
12
&OHgr;/cm
2
.
In order to prevent IC chips from being damaged by electro-static charges, plasma deposition techniques are conventionally utilized to deposit a conductive metal, such as Cu, Cr, Ni, Al, etc., on IC trays to a thickness of about 1.5 &mgr;m. Usually, the resulting IC trays come to have a surface conductivity from 10
3
&OHgr;/cm
2
to 10
5
&OHgr;/cm
2
.
An IC tray manufactured by such a conventional plasma deposition method suffers from the following disadvantages. First, a dimensional change occurs over the entire IC tray entity as a conductive metal is coated on the surface of the IC tray, requiring additional molds to be prepared. Second, the material deposited tends to be worn out by external chemical or physical factors. Third, since the surface conductivity required for the manufacture of antistatic IC trays is set below what is actually required a wasteful time consuming process period and excessive cost are needlessly imposed. Fourth, the deposited materials are apt to secede from IC trays easily. Fifth, too much conductive metal is deposited upon plasma deposition, so that the IC trays cannot be reused owing to a large content of the residual impurities. Sixth, plasma deposition methods cannot utilize gaseous ions such as nitrogen and argon in the provision of antistaticity for IC trays in addition to being problematic in reproductivity because of being greatly affected by process parameters.
SUMMARY OF THE INVENTION
Therefore, it is an object of the present invention to overcome the above problems encountered in prior art and to provide a method for providing high and stable antistaticity for IC trays by implanting a small amount of ions.
It is another object of the present invention to provide a method for manufacturing antistatic IC trays with a great efficiency and economical advantage.
Based on the present invention, the above objects could be accomplished by a provision of a method for providing antistaticity for polymeric integrated circuit trays, in which ions are implanted into the polymeric integrated circuit trays to achieve a surface resistance of 10
6
-10
12
&OHgr;/cm
2
in the integrated circuit trays. In one embodiment, the ions are sourced from gas selected from the group consisting of nitrogen and argon. In another embodiment, the ions are sourced from a metal selected from the group consisting of Ti, Li and Al.
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patent: 96-2108 (1996-10-01), None
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Burns Doane Swecker & Mathis
Oh Bok-Hwan
Pianalto Bernard
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