Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Reexamination Certificate
2005-03-22
2005-03-22
Lebentritt, Michael S. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
C257S378000, C257S434000, C257S556000, C257S560000, C257S563000, C257S564000
Reexamination Certificate
active
06870242
ABSTRACT:
A method including a buried layer formed on a semiconductor substrate, an active region formed adjacent to at least a portion of the buried layer, an isolation structure formed adjacent to at least a portion of the active region, and a gate oxide formed adjacent to at least a portion of the active region. The method also includes a polysilicon layer formed adjacent to at least a portion of the gate oxide having a portion removed to form a polysilicon definition structure that substantially surrounds and defines an emitter contact region. The method also includes forming a self-aligned implant region of the emitter contact region.
REFERENCES:
patent: 4669177 (1987-06-01), D'Arrigo et al.
patent: 5717241 (1998-02-01), Malhi et al.
Brady III W. James
Keagy Rose Alyssa
Lebentritt Michael S.
Menz Douglas
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