Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-06-26
1992-06-30
Nguyen, Nam
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505731, 505816, 20419224, H01B 1200, C23C 1434
Patent
active
051263203
ABSTRACT:
A method is disclosed which comprises setting a substrate within a mixed gas atmosphere containing 0.1 to 5% of oxygen gas and a balance as an inert gas, and sputtering a target member containing Ln, M, Cu and O within that atmosphere to obtain an oxygen-deficient perovskite type oxide superconducting thin-film of substantially Ln:M:Cu:O=1:2:3:(7-.delta.), where Ln represents at least one element selected from the rare earth elements and M represents at least one element selected from the group consisting of Ba, Sr, and Ca. The oxide superconducting thin-film of that composition ratio has a critical temperature of over 77K.
REFERENCES:
Evetts et al., "Structural . . . Process . . . Structures", Proceedings of Symposiums, 1987 Spring Meeting of Mat. Res. Soc. Apr. 23-24, 1987.
Zhas et al., "High Tc . . . Thin Films", International Journal of Modern Physics B, vol. 1, No. 2 (1987), 561-564.
Phys. Rev. B 35 (1987) 8824-8825, 1 Jun; H. Adachi, K. Setsune & K. Wasa Superconductivity in (La.sub.0.9 Sr.sub.0.1).sub.2 CuO.sub.4 single-crystal films.
Jap. J. Appl. Phys. 26 (1987) L709-170, 20 May; H. Adachi, K. Setsune, T. Mitsuyu, K. Hirochi, Y. Ichikawa, T. Kamada & K. Wasa Preparation and Characterization of Superconducting Y-Ba-Cu-O Thin Films.
Jap. J. Appl. Phys. 26 (1987) L738-740, 20 May; M. Kawasaki, S. Nagata, Y. Sato, M. Funabashi, T. Hasegawa, K. Kishio, K. Kitazawa, K. Fueki & H. Koinuma High Tc Yb-Ba-Cu-O Thin Films Deposited on Sintered YSZ Substrates by Sputtering.
Hori Akio
Miura Tadao
Sagoi Masayuki
Terashima Yoshiaki
Kabushiki Kaisha Toshiba
Nguyen Nam
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