Method for manufacturing an organic semiconductor element

Details Method for manufacturing an organic semiconductor element Method for manufacturing an organic semiconductor element

2011-07-12

2011-07-12

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S149000, C438S158000, C438S240000, C438S508000, C257S040000

Reexamination Certificate

active

07977150

ABSTRACT:
In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.

REFERENCES:
patent: 5574291 (1996-11-01), Ddabalapur et al.
patent: 5705826 (1998-01-01), Aratani et al.
patent: 5946551 (1999-08-01), Dimitrakopoulos et al.
patent: 6150668 (2000-11-01), Bao et al.
patent: 6207472 (2001-03-01), Callegari et al.
patent: 6300988 (2001-10-01), Ishihara et al.
patent: 6326640 (2001-12-01), Shi et al.
patent: 6335539 (2002-01-01), Dimitrakopoulos et al.
patent: 6429457 (2002-08-01), Berggren et al.
patent: 6433359 (2002-08-01), Kelley et al.
patent: 6452207 (2002-09-01), Bao
patent: 6528816 (2003-03-01), Jackson et al.
patent: 6635508 (2003-10-01), Arai et al.
patent: 6905908 (2005-06-01), Zhang et al.
patent: 7015502 (2006-03-01), Arai et al.
patent: 7061010 (2006-06-01), Minakata
patent: 2002/0012080 (2002-01-01), Ishihara et al.
patent: 2002/0022299 (2002-02-01), Jackson
patent: 2002/0155729 (2002-10-01), Baldwin et al.
patent: 2002/0164835 (2002-11-01), Dimitrakopoulos et al.
patent: 2002/0179901 (2002-12-01), Arai et al.
patent: 2003/0211649 (2003-11-01), Hirai et al.
patent: 2004/0191952 (2004-09-01), Shtein et al.
patent: 2005/0176196 (2005-08-01), Zhang et al.
patent: 2006/0208251 (2006-09-01), Yoshizawa
patent: 2006/0214252 (2006-09-01), Hirai et al.
patent: 2008/0063795 (2008-03-01), Kim et al.
patent: 0 716 458 (1996-06-01), None
patent: 1 416 069 (2004-05-01), None
patent: 08-228035 (1996-09-01), None
patent: 09-116163 (1997-05-01), None
patent: 2003-338629 (2003-11-01), None
patent: WO-03/016599 (2003-02-01), None
Notice on First Office Action dated Nov. 28, 2008 in Chinese Patent Application No. 200410011448.X, People's Republic of China, 7 pages; with English translation, 12 pp.
Yagi I. et al; “Pentacene FET Fabricated On Surface Treated SiO2/Si Substrate,” 50thJapan Society of Applied Physics and Related Societies, Extended Abstract (Mar. 2003 in Kanagawa University); 29a-Λ-9, Mar. 2005; p. 1418.
Lee.J et al., “Annealing Effects on the Electrical Characteristics of Pentacene Thin Film Transistors,”,Journal of the Korean Physical Society, Mar. 1, 2001, vol. 38, No. 3, pp. 282-285.

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