Method for manufacturing an inter-layer insulating film

Details Method for manufacturing an inter-layer insulating film Method for manufacturing an inter-layer insulating film

1993-03-04

1995-06-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437241, H01L 21316, H01L 21318

Patent

active

054242533

ABSTRACT:
A method for manufacturing an inter-layer insulating film (ex. O.sub.3, TEOS or NSG) with a superior surface flatness is disclosed to solve the problem that the surface of the inter-layer film formed on a certain under-layer substrate reveals roughness due to the influence of the substrate. It is provided a method for manufacturing O.sub.3 TEOS NSG film after doping nitrogen (N) atoms into the under-layer films, or after forming the under-layer films which contain nitrogen (N) atoms therein.

REFERENCES:
patent: 4762728 (1988-08-01), Keyser et al.
patent: 4872947 (1989-10-01), Wang et al.
H. Kotani et al., "Low-Temperature APCVD Oxide Using TEOS-Ozone Chemistry For Multilevel Interconnections", 1989, IEDM 89, IEEE, pp. 28.2.1-28.2.4.
M. Matsuura et al., "Substrate-Dependent Characteristics of APCVD Oxide Using TEOS and Ozone" (Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 239-242.

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