Method for manufacturing an integrated circuit having...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to corpuscular radiation

Reexamination Certificate

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C438S308000, C438S474000, C438S798000, C438S795000

Reexamination Certificate

active

07629196

ABSTRACT:
A method is disclosed for manufacturing an integrated circuit that has increased radiation hardness and reliability. A device active area of an integrated circuit is provided and a layer of radiation resistant material is applied to the device active area of the integrated circuit. In one advantageous embodiment the radiation resistant material is silicon carbide. In another advantageous embodiment a passivation layer is placed between the device active area and the layer of radiation resistant material. The integrated circuit of the present invention exhibits minimal sensitivity to (1) enhanced low dose rate sensitivity (ELDRS) effects of radiation, and (2) pre-irradiation elevated temperature stress (PETS) effects of radiation.

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