Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive
Reexamination Certificate
2006-05-16
2006-05-16
Gabor, Otilia (Department: 2878)
Radiant energy
Invisible radiant energy responsive electric signalling
Infrared responsive
C257S227000
Reexamination Certificate
active
07045785
ABSTRACT:
A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, fanning a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrate and suspending the infrared detection pixel within the hole by the supporting beam line.
REFERENCES:
patent: 5962854 (1999-10-01), Endo
patent: 6048092 (2000-04-01), Kimura et al.
patent: 6222454 (2001-04-01), Harling et al.
patent: 6335478 (2002-01-01), Chou et al.
patent: 6483111 (2002-11-01), Ishikawa et al.
patent: 6548879 (2003-04-01), Komobuchi et al.
patent: 6603160 (2003-08-01), Zhang
patent: 6608356 (2003-08-01), Kohyama et al.
patent: 6809358 (2004-10-01), Hsieh et al.
patent: 2002/0009821 (2002-01-01), Moor et al.
patent: 2005/0012840 (2005-01-01), Hsieh et al.
patent: 8-285680 (1996-01-01), None
patent: 2000-88640 (2000-03-01), None
T. Ishikawa, et al., Part of the SPIE Conference on Infrared Technology and Applications XXV, vol. 3698, pp. 556-564, “Low-Cost 320×240 Uncooled IRFPA Using Conventional Silicon IC Process”, Apr. 1999.
A. Yagishita, et al., IEEE Transactions on Electron Devices, vol. 47, No. 5, pp. 1028-1034, “High Performance Damascene Metal Gate MOSFET's for 0.1 μm Regime”, May 2000.
Iida Yoshinori
Mashio Naoya
Shigenaka Keitaro
Gabor Otilia
Kabushiki Kaisha Toshiba
LandOfFree
Method for manufacturing an infrared sensor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing an infrared sensor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing an infrared sensor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3550589