Fishing – trapping – and vermin destroying
Patent
1995-11-13
1996-11-19
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437 52, H01L 218247
Patent
active
055762344
ABSTRACT:
A memory cell manufacturing method includes the steps of: providing a silicon substrate with buried regions that are spaced by a channel; depositing a gate oxide layer over the substrate; removing a portion of the gate oxide layer which is over the channel; depositing a first polysilicon layer over remaining portions of the gate oxide layer and over exposed portion of the substrate; growing an insulating layer over the polysilicon layer; providing a first mask on the insulating layer, the mask having a length shorter than that of the insulating layer and two end portions which overlap respectively the buried regions; etching portions of the insulating layer and the polysilicon layer not covered by the mask; depositing a thin oxide layer over a remaining portion of the insulating layer; depositing a second polysilicon layer over the thin oxide layer and over the buried layers; providing a second mask, which has a width narrower than that of the second polysilicon layer, on the second polysilicon layer to define a control gate region; etching portions of the second polysilicon layer not covered by the second mask so as to form a control gate; growing a thick oxide layer on a remaining portion of the second polysilicon layer; and etching the insulating layer and the first polysilicon layer with the thick oxide layer serving as a mask.
REFERENCES:
patent: 5236853 (1993-08-01), Hsue
patent: 5418741 (1995-05-01), Gill
patent: 5432110 (1995-07-01), Inoue
patent: 5466622 (1995-11-01), Cappelletti
patent: 5510283 (1996-04-01), Maari
Liang Kuei-Chang
Yang Yeu-Haw
Booth Richard A.
Hualon Microelectronics Corporation
Wilczewski Mary
LandOfFree
Method for manufacturing an EPROM does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing an EPROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing an EPROM will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-540578