Method for manufacturing an electrode structure for III-V compou

Details Method for manufacturing an electrode structure for III-V compou Method for manufacturing an electrode structure for III-V compou

1991-10-16

1993-01-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437188, 437189, 437190, 437192, 437202, H01L 2144

Patent

active

051790416

ABSTRACT:
A method is disclosed for forming an electrode on a III-V semiconductor element. The resulting electrode has high wire bonding strength, a low ohmic contact resistance, and high reliability, while still being easy to process into desired shapes. The electrode structure is formed by annealing the structure after the formation of a laminated structure having an ohmic layer including at least nickel formed on the III-V compound semiconductor, a bonding layer to be connected to a bonding wire, a stopper layer provided between the ohmic layer and the bonding layer, and an isolation layer provided between the stopper layer and the ohmic layer.

REFERENCES:
patent: 4301233 (1981-11-01), Calviello
patent: 4853346 (1989-08-01), Baker et al.
Shappirio, "Metal penetration and dopant redistribution beneath alloyed ohmic contacts to n-GaAs", J. Vac. Sci. Technol A, vol. 5, No. 4, Jul./Aug. 1987.

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