Method for manufacturing an electrical interconnection by select

Details Method for manufacturing an electrical interconnection by select Method for manufacturing an electrical interconnection by select

1983-05-02

1985-05-14

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

1566591, 156662, 156664, 156665, 156666, 427 85, 427 90, 427 91, 427 96, 427 99, 430318, H01L 21285, H01L 2188

Patent

active

045172250

ABSTRACT:
A structure for an electrical interconnection suitable for a semiconductor integrated circuit is made by a process utilizing selective tungsten deposition at low pressure to form an intermediate conductive layer without significantly ablating nearby insulating material.

REFERENCES:
patent: 4267012 (1981-05-01), Pierce
patent: 4404235 (1983-09-01), Tarng
Shaw, "Vapor Deposited Tungsten for Silicon Devices", Solid State Technology, Dec. 1, 1971, pp. 53-57.
Miller, "Hot-Wall CVD Tungsten for VSLI", Solid State Technology, Dec. 1, 1980, pp. 79-82.

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