Method for manufacturing an electric charge transfer device

Details Method for manufacturing an electric charge transfer device Method for manufacturing an electric charge transfer device

1997-09-29

1999-08-24

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438302, 438526, H01L 21339

Patent

active

059435569

ABSTRACT:
In a method for manufacturing a charge transfer device, an N type semiconductor region is formed in a principal surface of a P type semiconductor substrate, to constitute a transfer channel of the charge transfer device. A silicon oxide film is formed to over a surface of the N type semiconductor region. Furthermore, a plurality of silicon nitride films are selectively formed on a surface of the silicon oxide film, separated from one another at predetermined intervals. Boron ions are ion-implanted into the N type semiconductor region, using as a mask the silicon nitride films and a photoresist formed to have an end partially overlapping each of the silicon nitride films, so that an N.sup.- type semiconductor regions, each of which constitutes an electric charge barrier region in the transfer channel, are selectively formed in the N type semiconductor region, in self alignment with the one end of each silicon nitride film, and on the other hand, the N type semiconductor region covered with the silicon nitride films and the photoresist, will constitute electric charge storage regions in the transfer channel. A plurality of conductive electrodes are formed each to cover the silicon oxide film between each pair of adjacent silicon nitride films, and the conductive electrodes are alternatively connected to a pair of wiring conductors.

REFERENCES:
patent: 4065847 (1978-01-01), Borel et al.
patent: 4216574 (1980-08-01), Feist
patent: 4742016 (1988-05-01), Rhodes
patent: 5773324 (1998-06-01), Yoon et al.
"Two-Phase Charge Coupled Linear Imaging Devices with Self-Aligned Implanted Barrier" by Choong-Ki Kim IEDM Tec. Digest, 1974, pp. 55-58.

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