Method for manufacturing an artificial grain boundary type Josep

Details Method for manufacturing an artificial grain boundary type Josep Method for manufacturing an artificial grain boundary type Josep

1992-12-07

1994-10-11

Thomas, Tom

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Producing josephson junction, per se

505702, 156630, H01B 1200, H01L 3912

Patent

active

053547349

ABSTRACT:
A portion of a sufficiently thick insulating layer formed on a substrate is removed so that a recessed device region is formed and surrounded by masking wall portions left at both ends of the recessed device region. A first oxide superconducting thin film is deposited at angle of 30.degree. to the substrate so as to ensure that a c-axis oriented oxide superconducting thin film grows in such a way that a portion of the recessed device region is masked by one of the masking wall portions so that no thin film grows over the masked portion of the recessed device region. Then, another oxide superconducting thin film is deposited at angle of -30.degree. to the substrate so as to ensure that an a-axis oriented oxide superconducting thin film grows in such a way that another portion of the recessed device region is masked by the other of the masking wall portions, so that no thin film grows over the masked portion, but the a-axis oriented oxide superconducting thin film is in contact with the c-axis oriented oxide superconducting thin film, with the result that a grain boundary functioning a weak link is formed between the a-axis oriented oxide superconducting thin film and the c-axis oriented oxide superconducting thin film.

REFERENCES:
patent: 5034374 (1991-07-01), Awaji et al.
patent: 5162298 (1992-11-01), Chaudhari et al.
patent: 5252390 (1993-10-01), Takada et al.

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