Method for manufacturing an amorphous silicon thin film solar ce

Details Method for manufacturing an amorphous silicon thin film solar ce Method for manufacturing an amorphous silicon thin film solar ce

1990-04-24

1992-10-13

Prenty, Mark V.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 15, 357 2, 357 58, 136244, H01L 2714, H01L 2948, H01L 4500, H01L 2912

Patent

active

051555654

ABSTRACT:
A thin film p-i-n solar cell and Schottky barrier diode are fabricated adjacent one another on a common flexible polyimide substrate. A titanium nitride diffusion barrier prevents contaminants of an aluminum contact layer on the substrate from reacting with the semiconductor body of the solar cell and diode during subsequent fabrication. An n.sup.+ -type hydrogenated amorphous silicon layer overlies the layer of titanium nitride, and forms an ohmic contact with the solar cell and diode. The diode includes an n-type layer of silicon doped with phosphorus to a concentration of 10.sup.18 to 10.sup.20 atoms per cubic centimeter to increase its forward current density. The solar cell and diode are separated from one another by an epoxy strip. A top conducting oxide layer forms a Schottky barrier with the semiconductor body of the diode.

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