Method for manufacturing alignment mark of semiconductor...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

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C438S404000, C438S424000, C438S427000

Reexamination Certificate

active

06958280

ABSTRACT:
The present invention discloses method for manufacturing alignment mark wherein a predetermined thickness of a device isolation film is etched prior to removing a pad nitride film during a shallow trench isolation process to increase contrast. In accordance with the method, a pad nitride film pattern and a pad oxide film pattern exposing a predetermined portion of the semiconductor substrate are formed. The semiconductor substrate is etched using the pad nitride film pattern as a mask to form an alignment mark trench. A device isolation film is formed in the trench and a predetermined thickness of the device isolation film is etched to form an alignment mark. The pad nitride film pattern is then removed.

REFERENCES:
patent: 6043133 (2000-03-01), Jang et al.
patent: 6049137 (2000-04-01), Jang et al.
patent: 6194287 (2001-02-01), Jang
patent: 6232200 (2001-05-01), Chu
patent: 6303458 (2001-10-01), Zhang et al.
patent: 6429136 (2002-08-01), Miwa
patent: 6534378 (2003-03-01), Ramkumar et al.
patent: 2001/0026994 (2001-10-01), Watanabe
patent: 2004/0048441 (2004-03-01), Akatsu et al.

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