Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2005-10-25
2005-10-25
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S404000, C438S424000, C438S427000
Reexamination Certificate
active
06958280
ABSTRACT:
The present invention discloses method for manufacturing alignment mark wherein a predetermined thickness of a device isolation film is etched prior to removing a pad nitride film during a shallow trench isolation process to increase contrast. In accordance with the method, a pad nitride film pattern and a pad oxide film pattern exposing a predetermined portion of the semiconductor substrate are formed. The semiconductor substrate is etched using the pad nitride film pattern as a mask to form an alignment mark trench. A device isolation film is formed in the trench and a predetermined thickness of the device isolation film is etched to form an alignment mark. The pad nitride film pattern is then removed.
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Brewster William M.
Heller Ehrman
Hynix / Semiconductor Inc.
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