Liquid crystal cells – elements and systems – Nominal manufacturing methods or post manufacturing...
Reexamination Certificate
2007-10-02
2007-10-02
Schechter, Andrew (Department: 2871)
Liquid crystal cells, elements and systems
Nominal manufacturing methods or post manufacturing...
C349S043000, C349S122000, C349S138000
Reexamination Certificate
active
10173897
ABSTRACT:
A TFT and a passivation film are formed on a transparent substrate and thereafter the passivation film is annealed. When measuring drain currents of a TFT at a fixed turn-on voltage (Von) and a fixed turn-off voltage (Voff), although performance of a TFT annealed (solid line) rarely changes, performance of a TFT not annealed (dashed line) changes to a large extent, in more detail, drain current drastically decreases in accordance with the change of TFT performance. This phenomenon means that on-resistance of a TFT not annealed is being increased to a great extent.
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Sakamoto Michiaki
Yamaguchi Yuichi
Chen W. Patty
Hayes & Soloway P.C.
NEC Corporation
NEC LCD Technologies Ltd.
Schechter Andrew
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