Method for manufacturing a wafer having a microdefect-free layer

Details Method for manufacturing a wafer having a microdefect-free layer Method for manufacturing a wafer having a microdefect-free layer

1997-03-12

1999-10-05

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

438142, 438144, 117935, C30B 102

Patent

active

059617136

ABSTRACT:
A semiconductor silicon wafer (10) useful as a calibration standard for measurement of a thickness (18) of a microdefect-free layer (16) is formed by depositing an epitaxial layer onto a substrate (12) having an interstitial oxygen concentration suitable for precipitating oxide. Large, uniform oxide microdefects (14) are formed in the substrate by maintaining the semiconductor silicon wafer at between 600.degree. C. and 900.degree. C. to nucleate oxide precipitates that are then grown at between 800.degree. C. and 1,200.degree. C. Because the epitaxial layer contains no oxide precipitate nuclei to form microdefects, the epitaxial layer remains a microdefect-free layer and has a relatively sharp, easily detectable boundary with the substrate. The epitaxial layer can be polished to a reduced thickness, if desired.

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