Method for manufacturing a tunnel junction magnetoresistive...

Details Method for manufacturing a tunnel junction magnetoresistive... Method for manufacturing a tunnel junction magnetoresistive...

2008-03-31

2010-10-26

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S381000, C257S295000, C257S421000, C257SE21665, C257SE43004

Reexamination Certificate

active

07820455

ABSTRACT:
A method for manufacturing a magnetoresistive sensor that provides increased magnetoresistive performance. The method includes forming a series of sensor layers with at least one layer containing CoFeB, and having a first capping layer thereover. A high temperature annealing is performed to optimize the grains structure of the sensor layers. The first capping layer is then removed, such as by reactive ion etching (RIE). An antiferromagnetic layer is then deposited followed by a second capping layer. A second annealing is performed to set the magnetization of the pinned layer, the second annealing being performed at a lower temperature than the first annealing.

REFERENCES:
patent: 7235408 (2007-06-01), Janesky et al.
patent: 7595520 (2009-09-01), Horng et al.
patent: 2007/0015293 (2007-01-01), Wang et al.
patent: 2007/0253120 (2007-11-01), Saito et al.

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