Method for manufacturing a thin film transistor panel

Details Method for manufacturing a thin film transistor panel Method for manufacturing a thin film transistor panel

1995-04-21

1996-08-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437 40, 437913, 148DIG102, H01L 21786

Patent

active

055455760

ABSTRACT:
A gate electrode, a semiconductor thin film, a channel protecting film and a photoresist are accumulated on the overall surface of a transparent substrate on which a gate electrode and a gate line are formed. Ultraviolet rays are irradiated through the substrate so that the photoresist and the channel protecting film are self-aligned with respect to the gate electrode and the gate line. A mask is formed on the channel protecting film so as to extend in a direction perpendicular to the channel protecting film. The channel protecting film and the semiconductor thin film are etched using the mask. As a result, the semiconductor thin film and the channel protecting film are patterned without positional deviation so as to have the same width W. Therefore, it is possible to reduce the thin film transistor forming region and the number of steps of the manufacturing process.

REFERENCES:
patent: 4790630 (1988-12-01), Maurice
patent: 4990460 (1991-02-01), Moriyama
patent: 5270229 (1993-12-01), Ishihara

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