Fishing – trapping – and vermin destroying
Patent
1995-10-04
1997-03-18
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437 44, 437 43, H01L 21265
Patent
active
056122349
ABSTRACT:
A thin film transistor for incorporation into an active-matrix liquid crystal display includes an active layer provided on a substrate. An electrode insulating layer is formed on the active layer, and a gate electrode including first and second gate layers is provided on the electrode insulating layer. The second gate layer overlies the first gate layer and has a width greater than the first gate layer. LDD regions, self-aligned with the second gate layer are provided in the active layer adjacent source and drain regions. The active layer further including a channel region located under the first gate layer and offset regions located under portions of the second gate layer extending beyond the first gate layer at opposite sides of the channel region. In the manufacture of the thin film transistor, an active layer is formed on a substrate; electrode insulating layer is formed on the active layer; oxidizable first gate electrode and a non-oxidizable second gate electrode of the same widths are stacked on the electrode insulating layer; low-concentration impurity ions are implanted in the active layer using the second gate electrode as a mask; sides of the first electrode, to form oxide layers that reduce the width of the first gate electrode; and implanting high-concentration impurity ions, using the second gate electrode and the oxide layers as implantation masks.
REFERENCES:
patent: 5430320 (1995-07-01), Lee
Y. Yamamoto et al., "High Performance Low Temperature Poly-Si TFT with Self-Aligned Offset Gate Structure by Anodic Oxidation of Al for a Driver Monolithic LCDs", ASIA Display 1995, pp. 941-942.
Kobayashi et al., "A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure", Jpn. J. Appl. Phys., 32(1, 1B):469-473 (1993).
LG Electronics Inc.
Nguyen Tuan H.
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