Method for manufacturing a thin film transistor

Details Method for manufacturing a thin film transistor Method for manufacturing a thin film transistor

1993-09-28

1995-07-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437247, 437967, 148DIG3, 148DIG122, H01L 2186

Patent

active

054299616

ABSTRACT:
A method for manufacturing a TFT of a SRAM in a highly-integrated semiconductor device, to enlarge the grain size of a polysilicon film, includes steps of depositing amorphous silicon film under a pressure capable of maintaining a uniform thickness thereof, and forming a polysilicon film which has a maximized grain size in the same tube that the amorphous silicon film has been deposited, while performing an annealing process by raising the temperature to 600.degree.-650.degree. C. for 4-10 hours under the pressure which is lowered to approximately 10.sup.-3 Torr. The polysilicon film having a maximized grain size is utilized as the channels of the TFT.

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