Method for manufacturing a surface emitting type AlGaAs/GaAs sem

Fishing – trapping – and vermin destroying

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148DIG26, 148DIG95, 156613, 372 50, 437 81, 437 89, 437133, 437970, H01L 2120

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049506226

ABSTRACT:
A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy method which is capable of forming naturally a 45.degree. mirror reflective face during the epitaxy method itself. The method comprises the steps of forming a silicon oxide or silicon nitride layer on one side of a n-type single crystal GaAs substrate as a mask, removing the mask of the regions each for forming a 45.degree. mirror reflective face and a LASER diode by use of a photolithography and a chemicaletching, forming the two layers by removing the photoresistor on the remaining mask after a selective epitaxy process and converting a slant face of the LASER diode into a vertical face, depositing a n-type metal layer on the other side of the substrate, and carrying out a heat treatment.

REFERENCES:
patent: 4718070 (1988-01-01), Liau et al.
patent: 4784722 (1988-11-01), Liau et al.
patent: 4865684 (1989-09-01), Bouadma
patent: 4869780 (1989-07-01), Yang et al.
patent: 4881237 (1989-11-01), Donnelly
Comerford et al., "Offset Laser to Groove Waveguide Coupler", IBM TDB, vol. 20, No. 4, Sep. 1977, pp. 1606-1608.
Donnelly et al., "Monolithic Two-Dimensional Surface-Emitting Arrays of . . . Lasers", Appl. Phys. Lett., 51(15), Oct. 12, 1987, pp. 1138-1140.
Azoulay et al., "Selective MOCVD Epitaxy for Optoelectronic Devices", J. Crystal Growth, vol. 55, No. 1, Oct. 1981, pp. 229-234.
Iga et al., ". . . GaAlAs/GaAs Surface Emitting Injection Laser", Appl. Phys. Lett. 45(4), Aug. 15, 1984, pp. 348-350.
Windhorn et al., "Monolithic GaAs/AlGaAs Diode Laser/Reflector Devices . . . ", Appl. Phys. Lett., 48(24), Jun. 16, 1986, pp. 1675-1677.

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