Method for manufacturing a surface acoustic wave device with...

Details Method for manufacturing a surface acoustic wave device with... Method for manufacturing a surface acoustic wave device with...

2006-12-12

2006-12-12

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S830000, C029S831000, C029S832000, C029S835000, C029S846000

Reexamination Certificate

active

07146695

ABSTRACT:
A surface acoustic wave device has superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode, for example, on a θ rotation Y-cut (θ=36° to 42°) LiTaO3piezoelectric substrate, an underlying electrode layer including Ti or Cr as a primary component is formed, and an Al electrode layer including Al as a primary component is then formed on this underlying electrode layer. The Al electrode layer is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers.

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Official Communication issued in the corresponding Japanese Application No. 2002-341690, mailed on Jul. 25, 2006.

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