Metal working – Piezoelectric device making
Reexamination Certificate
2006-01-11
2010-06-08
Banks, Derris H (Department: 3729)
Metal working
Piezoelectric device making
C029S830000, C029S831000, C029S847000, C310S31300R
Reexamination Certificate
active
07730596
ABSTRACT:
A method of manufacturing a surface acoustic wave device having a high electromechanical coefficient and reflection coefficient, and also having an improved frequency-temperature characteristic is achieved by forming a SiO2film on an IDT so as to prevent cracking from occurring on a surface of the SiO2film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3substrate, and a SiO2film disposed on the LiTaO3substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
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Campbell et al.; “A Method for Estimating Optimal Crystal Cuts and Propagation Directions for Excitation of Piezoelectric Surface Waves”; IEEE Transactions on Sonics and Ultrasonics; vol. SU-15; No. 4; Oct. 1968; pp. 209-217.
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Kadota Michio
Mimura Masakazu
Nakao Takeshi
Banks Derris H
Keating & Bennett LLP
Murata Manufacturing Co. Ltd.
Nguyen Tai
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