Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Semiconductor device or thin film electric solid-state...
Patent
1994-12-02
1996-04-23
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Semiconductor device or thin film electric solid-state...
505410, 505193, 505191, 505702, 427 62, 427 63, 257 34, 257 39, H01L 3924, H01L 3922
Patent
active
055103243
ABSTRACT:
The invention relates to a method of manufacturing a superconducting device, which comprises the steps of forming on a principal surface of a substrate a non-superconducting oxide layer having a similar crystal structure to that of a c-axis oriented oxide superconductor thin film and a flat-top projection at its center portion, forming a c-axis oriented oxide superconductor thin film having an extremely thin thickness on the non-superconducting oxide layer so as to form a superconducting channel on the projecting portion of the non-superconducting oxide layer, forming an insulating layer on the c-axis oriented oxide superconductor thin film so as to form a gate insulating layer on the superconducting channel, and forming an a-axis oriented oxide superconductor thin film so as to form a superconducting source region and a superconducting drain region of which upper surfaces have the same level as that of the superconducting channel. The projecting portion of the non-superconducting oxide layer is preferably formed by a lift-off process using a lift-off layer formed of a CaO layer covered with a Zr layer which is removed by utilizing water and the following reaction:
REFERENCES:
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5248663 (1993-09-01), Noshiro et al.
patent: 5322526 (1994-06-01), Nakamura et al.
patent: 5326746 (1994-07-01), Ohtani et al.
Olsson et al., "Crack formation in epitaxial 110! thin films of YBa.sub.2 Cu.sub.3 O.sub.7-.delta. and PrBa.sub.2 Cu.sub.3 O.sub.7-x on 110!SrTiO.sub.3 substrates, " Appl. Phys. Lett., vol. 58, #15, 15 Apr. 1991, pp. 1682-1684.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
King Roy V.
Sumitomo Electric Industries Ltd.
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