Method for manufacturing a superconducting device having an extr

Details Method for manufacturing a superconducting device having an extr Method for manufacturing a superconducting device having an extr

1995-05-12

1996-04-23

Thomas, Tom

Metal working

Barrier layer or semiconductor device making

505330, 505701, 437910, H01B 1200

Patent

active

055091830

ABSTRACT:
A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, an extremely thin superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor. The non-superconducting oxide layers contact with at least the superconducting source region and the superconducting drain region. In the superconducting device, the superconducting channel, the superconducting source region and the superconducting drain region are formed of one oxide superconductor thin film of which the center portion is c-axis oriented and the both ends are a-axis oriented.

REFERENCES:
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patent: 5399546 (1995-03-01), Nakamura et al.
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Wu et al., "High Critical Current In Epitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films On Silicon With Buffer Layers", Appl. Phys. Lett., vol. 54, No. 8, pp. 754-756, (1989).
Olsson et al., "Crack Formation In Epitaxial 110! Thin Films Of YBa.sub.2 Cu.sub.3 O.sub.7-x on 110!SrTiO.sub.3 Substrates", Appl. Phys. Lett., vol. 58, No. 15, pp. 1682-1684, (1991).

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