Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1993-04-28
1994-06-21
Hearn, Brian E.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
437 62, 437190, 505703, H01L 3912
Patent
active
053225260
ABSTRACT:
A superconducting device includes a superconducting channel constituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gain electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of an a-axis oriented oxide superconductor crystal. The superconducting channel is continuous with the superconductor source electrode and the superconductor drain electrode.
REFERENCES:
patent: 5126315 (1992-06-01), Nishino et al.
patent: 5135908 (1992-08-01), Yang et al.
patent: 5183800 (1993-02-01), Nakagawa
patent: 5202273 (1993-04-01), Nakamura
patent: 5212150 (1993-05-01), Yamazaki
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Chaudhari Chandra
Hearn Brian E.
Sumitomo Electric Industries Ltd.
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