Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Semiconductor device or thin film electric solid-state...
Patent
1997-01-02
1998-04-14
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Semiconductor device or thin film electric solid-state...
505329, 505410, 505473, 505702, 505728, 427 62, 427 63, H01L 3924
Patent
active
057390843
ABSTRACT:
A method for fabricating a superconducting device with a substrate, a first oxide superconductor thin film, a barrier layer, a diffusion layer, and a second oxide superconductor thin film. The first oxide superconductor thin film with a very thin thickness is formed on the principal surface of the substrate. The barrier layer and the diffusion source layer are formed on a portion of the first oxide superconductor thin film. The second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film until the barrier and diffusion source layers are embedded in the second oxide superconductor thin film, so that a material of the diffusion source layer is diffused into the second oxide superconductor thin film.
REFERENCES:
patent: 5051396 (1991-09-01), Yamazaki
patent: 5194419 (1993-03-01), Shiga et al.
patent: 5219834 (1993-06-01), Usuki et al.
patent: 5229360 (1993-07-01), Shiga et al.
patent: 5547923 (1996-08-01), Nakamura et al.
Wu et al, "High Critical Currents in Epitaxial YBaCuO Thin Films on Silicon With Buffer Layers", Appl. Phys. Lett., vol. 54, No. 8, 20 Feb. 1989, pp. 754-756.
Chien et al, "Effect of Noble Metal Buffer Layers on Superconducting YBaCuO Thin Films," Appl. Phys. Let., vol. 51, No. 25, Dec. 21, 1987, pp. 2155-2157.
Ma et al, Appl. Phys. Lett. 55(9) Aug. 1989, pp. 896-898.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
King Roy V.
Sumitomo Electric Industries Ltd.
LandOfFree
Method for manufacturing a superconducting device having a reduc does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a superconducting device having a reduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a superconducting device having a reduc will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-634423