Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1995-08-31
1997-11-04
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
505325, 505702, 427 62, 427 63, H01L 3924
Patent
active
056839685
ABSTRACT:
A superconducting device or a super-FET has a pair of superconducting electrode regions (20b, 20c) consisting of a thin film (20) oxide superconductor being deposited on a substrate (5) and a weak/ink region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a), these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) and/or a gate electrode insulating layer (16) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.
REFERENCES:
patent: 4751563 (1988-06-01), Labowitz et al.
patent: 4878094 (1991-10-01), Balkanski
patent: 4891355 (1990-01-01), Hayashi et al.
patent: 5026682 (1991-06-01), Clark et al.
patent: 5051396 (1991-09-01), Yamazaki
patent: 5096882 (1992-03-01), Kato et al.
Ma et al, Appl. Phys. lett. 55(9) Aug. 1989, pp. 896-898.
Rothschild et al., "Laser Patterning of Metal Oxide Supeconductor Films by Reactive Solid-State Transformation", IEEE Electron Device Letters, vol. 9, #2, Feb. 1988, pp. 68-70.
Dijkkamp et al., "Preparation of Y-Ba-Cu-O Superconductor Thin Films Using Pulsed Laser Evaporation from Hi-Tc Bulk Material," App. Phys. Lett., vol. 51, #8, 24 Aug. 1987, pp. 619-621.
Clark et al., "Effects of Radiation Damage in Ion-Implanted Thin Films of Metal-Oxide Superconductors", Appl. Phys. Lett., vol. 51, #2, 13 Jul. 1987, pp. 139-141.
Yoshida et al., "Monolithic Device Fabrication Using High-Tc Supeconductor", IEDM 88, pp. 282-285.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
King Roy V.
Sumitomo Electric Industries Ltd.
LandOfFree
Method for manufacturing a superconducting device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a superconducting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a superconducting device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1832975