Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2011-04-26
2011-04-26
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C257S777000, C257SE27137, C257SE25013
Reexamination Certificate
active
07932162
ABSTRACT:
A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate.
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Korean Office Action for 2008-0099691 mailed on May 27, 2010.
Kurosawa Tetsuya
Sagara Junya
Takyu Shinya
Kabushiki Kaisha Toshiba
Turocy & Watson LLP
Vu David
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