Method for manufacturing a stacked capacitor type semiconductor

Details Method for manufacturing a stacked capacitor type semiconductor Method for manufacturing a stacked capacitor type semiconductor

1995-12-07

1998-09-01

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 148DIG14, H01L 2120

Patent

active

058010793

ABSTRACT:
In a stacked capacitor type semiconductor device, first and second insulating layers are formed on a semiconductor substrate. A capacitor lower electrode layer is formed in an opening formed within the second insulating layer, and is electrically connected via a contact hole of the first insulating layer to an impurity doped region of the semiconductor substrate. A capacitor insulating layer is formed on the capacitor lower electrode layer, and a capacitor upper electrode layer is formed on the capacitor insulating layer.

REFERENCES:
patent: 5162881 (1992-11-01), Ohya
patent: 5217914 (1993-06-01), Matsumoto et al.
patent: 5247196 (1993-09-01), Kimura
patent: 5274258 (1993-12-01), Ahn
patent: 5389568 (1995-02-01), Yun
patent: 5401681 (1995-03-01), Dennison
patent: 5418180 (1995-05-01), Brown
patent: 5491103 (1996-02-01), Ahn et al.
patent: 5508222 (1996-04-01), Sakao

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