Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1997-02-26
1998-10-20
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438253, 438256, 438399, H01L 2120
Patent
active
058245910
ABSTRACT:
There is provided a semiconductor device and a method for manufacturing the same wherein a capacitor stack is not separated from a substrate even when a shift in setting occurs between a contact and a stack pattern, and even when the stack pattern has a small size. After a contact hole is opened in an interlayer insulating film, a first polysilicon film which constitutes a storage electrode and a first BPSG film which constitutes a core are formed, one after another. Then a stack pattern is formed by patterning the first BPSG film and the first polysilicon film. A second polysilicon film is formed on a side wall of the stack pattern. Next, a second insulating BPSG film is formed on the overall surface of the silicon substrate, so that the upper surface of the second insulating film is located at a position higher than the upper surface of the stack pattern. After that, the second BPSG film is etched and removed until the upper surface of the first BPSG film of the core is exposed. Then the second BPSG film is etched until the BPSG film of the core is completely removed.
REFERENCES:
patent: 5488011 (1996-01-01), Figura et al.
patent: 5508222 (1996-04-01), Sakao
NEC Corporation
Nguyen Tuan H.
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