Method for manufacturing a solid-state image sensing device,...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S033000, C438S075000, C438S114000, C257SE27150, C257SE27155

Reexamination Certificate

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10880413

ABSTRACT:
Light detecting elements are formed in areas marked off by scribe lines on a semiconductor substrate, and color filters are deposited in such a manner as to cover the formed areas of the light detecting elements, and then an infrared cut-off filter, on which an infrared reflecting film is vapor-deposited in such a manner as to cover the formed areas of the light detecting elements, is firmly fixed to the surface of the semiconductor substrate through the interposition of a translucent resin layer, such as an epoxy adhesive, to thereby form a multilayered structure, and this multilayered structure is diced along scribe lines.

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